ROHM's 24 V P-channel MOSFETs utilize ROHM's 5^th generation refined process to achieve a finer gate structure and higher current density than their conventional products, resulting in low ON resistance per unit area for 24 V input -40 V / -60 V withstand P-channel MOSFETs. These products feature 62% lower ON resistance vs. conventional products for -40 V products and by 52% for the -60 V products contribute to greater energy savings and miniaturization. This lineup leverages accumulated expertise regarding reliability to optimize the device structure while adopting a design that mitigates electric field concentration at the gate trench corner where the electric field is most concentrated. This allows ROHM to succeed in improving reliability against degradation of element characteristics at high temperature bias without sacrificing ON resistance, which is typically in a contradictory relationship, contributing to stable long-term operation in industrial equipment that demands superior quality.

Applications

• DC fan control
• Power management switch