Rohm plans to mass produce hybrid IGBTs with integrated SiC Schottky barrier diode
Author: EIS Release Date: Jul 26, 2021
ROHM intends to move into mass production of its hybrid IGBTs with integrated 650V SiC Schottky barrier diode in December.
The RGWxx65C series (RGW60TS65CHR, RGW80TS65CHR, RGW00TS65CHR devices are qualified under the AEC-Q101 automotive reliability standard. They are suitable for automotive and industrial applications that handle large power, such as photovoltaic power conditioners, onboard chargers, and DC/DC converters used in electric and electrified vehicles (xEV).
The RGWxx65C series utilizes ROHM’s low-loss SiC Schottky barrier diodes in the IGBT’s feedback block as a freewheeling diode that has almost no recovery energy and thus minimal diode switching loss. Additionally, since the recovery current does not have to be handled by the IGBT in turn-on mode, the IGBT turn-on loss is reduced significantly.
Both effects together result in up to 67% lower loss over conventional IGBTs and 24% lower loss compared with Super Junction MOSFETs (SJ MOSFETs) when used in vehicle chargers. This effect provides good cost performance while contributing to lower power consumption in industrial and automotive applications.
In recent years, global efforts to reduce environmental burden and achieve a carbon-neutral and decarbonized society have spurred the proliferation of electrified vehicles (xEV). At the same time, the diversification of power semiconductors used in various vehicle inverter and converter circuits necessary to configure more efficient systems is currently underway, along with technological innovation of both ultra-low-loss SiC power devices (i.e. SiC MOSFETs, SiC SBDs) and conventional silicon power devices (e.g. IGBTs, Super Junction MOSFETs).
To provide effective power solutions for a wide range of applications, ROHM is focusing not only on product and technology development for industry-leading SiC power devices, but for silicon products and driver ICs as well.