GaN Systems and ON Semiconductor have joint availability of a high-speed, half-bridge GaN daughter board using GaN Systems’ 650 V, 30 A GaN E-HEMTs and ON Semiconductor’s NCP51820 high speed gate driver evaluation board.

This  is one of many upcoming GaN-based power system solutions both companies are developing.

The kit t is developed for existing and new PCB designs and allows designers to easily evaluate GaN in existing half−bridge or full−bridge power supplies.

It is suitable for applications such as AC-DC adapters, data center power supplies, PV inverters, energy storage systems, and Bridgeless Totem Pole topologies.

It has a reduced component count in a 25mm x 25mm layout.

Benefits include significant reductions in power losses, weight, size (up to 80% in layout size), and system costs (up to 60% BOM cost savings).