More-on: Infineon’s source-down mosfet package

Author: EIS Release Date: Jan 17, 2022

Infineon announced source-down packaged power mosfets earlier today in which it flipped the die to improve transistor performance.

 

Infineon Source down mosfet

Alongside the part announcement it released a diagram and its reasons for what it did.

 

The source-down mosfet is on the right, and the more conventional device on the left.

 

According to Infineon:

 

The source-down package (1) is externally the same as the (2) conventional drain-down 3.3 x 3.3mm PQFP package.

 

Internally, the die in Infineon’s latest drain-down mosfet (3) has less active die area that the new source-down mosfet die (4) as source-down construction removes the need for a gate contact cut-out.

 

While the drain-down copper clip (5) has to avoid the bond wire, the source-down copper clip (6) can be wider, lowering thermal resistance, as there is no bond wire to avoid.

 

Infineon centre-gate source-down footprintThe source down package (7) also available with ‘centre gate’ footprint (left) which increases source-drain creepage distance and ease layout when paralleling.