RF GaN amplifiers span Q, V and E-bands

Author: EIS Release Date: Apr 14, 2022

Altum RF has announced three GaAs pHEMT MMIC amplifiers for Q, V, and E-bands, using Win Semiconductors’ PP10-20 GaAs technology which is intended for use up to 170GHz and, compared with its earlier PP10-10 platform, “allows for a substantial increase in gain, with the same operating voltage for power applications”, according to Altum.

 

Altum AFR1208 LNA eval board

They amplifiers are:

 

• 37 – 59GHz ARF1208 low noise amplifier: 2.5dB noise figure, 26.5dB linear gain at 50GHz
• 57 – 71GHz ARF1207 linear amplifier: 25dB gain, 22dBm P1dB output
• 71 – 86GHz ARF1206 low noise amplifier: 22dB gain, 4dB noise figure

Taking the ARF 1208 LNA as an example (evaluation board pictured), it is a bare die without packaging, pre-matched to 50Ω and ESD protected to simplify handling.

 

 

2V (55mA) is required for LNA biasing and 4V (80mA) for driver biasing. When operated with a driver bias, it is capable of delivering a Psat of +19dBm.

 

 

 

P1dB is 16.5dBm, input return loss is >10dB and output return loss >10dB. OP1dB  is 16.5dBm. The 2.5dB noise figure is at 50GHz with LNA bias.