Infineon shipping 2Mb rad hard FRAM

Author: EIS Release Date: Apr 25, 2022

Infineon is shipping rad hard, SPI FRAM for extreme environments.

 

 

The new devices  are more energy efficient than non-volatile EEPROM and serial NOR Flash devices for space applications.

 

The addition of a QML-V qualified F-RAM to Infineon’s memory portfolio makes the benefits of nearly infinite endurance, instant non-volatile write technology, and over 100-year data retention available to space applications.

 

 

As a direct replacement for serial NOR flash and EEPROMs, rad hard F-RAM is ideal for data logging of mission critical data, telemetry storage, and command and control calibration data storage. The new device is suitable for providing boot code storage solutions for microcontrollers, FPGAs and ASICs.

 

 

 

Support for the industry standard Serial Peripheral Interface (SPI) protocol improves ease-of-use and supports a smaller footprint and lower pin count. Serial protocols are increasingly used in satellite and space applications, with multiple suppliers now offering SPI capable space-grade processors, FPGAs and ASICs.

 

The 2 Mb density F-RAM with SPI is the first in its family of rad hard non-volatile F-RAMs. The devices have virtually infinite endurance with no wear leveling, with 10 trillion read/write cycles and 120 years data retention at 85°C, at an operating voltage range of 2.0 V to 3.6 V. The lowest operating current is 10 mA maximum, with an extreme low programming voltage of 2 V.

 

The rad hard F-RAMs are also suitable for avionic and other applications that require military standard temperature grades reaching from -55°C to 125°C. Additional features include a small footprint with 16-pin ceramic SOP packaging. The DLAM QML-V qualified devices have  radiation performance of:

 

TID: >150 Krad (Si)

SEL: >114 MeV·cm 2/mg @115°C

SEU: Immune

SEFI: <1.34 * 10-4 err/dev.day

The F-RAMs are available now.