100V 3.9mΩ GaN transistor is rad-hardened

Author: EIS Release Date: Jun 23, 2022

EPC has announced a 100V 3.9mΩ radiation-hardened GaN HEMT.

 

EPC7018 rad-hard GaN fantasy

Called EPC7018 it comes in a 13.9mm2 chip-scale package (the ‘flag’ in the image) and can handle pulses up to 345A.

 

The total dose radiation rating is greater than 1Mrad, and SEE immunity for LET of 85MeV/(mg/cm2).

 

“EPC7018 offers designers a high power, low on-resistance device enabling a new generation of power conversion and motor drives in space operating at higher frequencies, higher efficiencies and greater power densities than achievable before,” said EPC CEO and founder Alex Lidow.

 

Applications are foreseen in dc-dc converters, motor drives, lidar and ion thrusters.

 

Samples are available now, and the part is scheduled to be qualified for volume shipment in December this year.