1,200V SiC T-switch for three-level converters, and a bridge too

Author: EIS Release Date: Sep 14, 2022

STMicroelectronics has released a silicon carbide T-switch module for three-level dc-dc converter topologies (right), and also a single-phase full-bridge.

 

ST SiC Tswitch A2U12M12W2-F2STMicroelectronics has released a silicon carbide T-switch module for three-level dc-dc converter topologies (right), and also a single-phase full-bridge.

 

Both are rated at 1.2kV, 75A and contain four of the company’s second-generation 13mΩ SiC mosfets, in its 48 x 57mm Acepack power package which can be press-fitted or soldered.

 

ST Acepack2 SiC mosfet

 

The package (left) has Cu-Al2O3-Cu substrates for good thermal conductivity.

 

Junction to heatsink conductivity is ~0.46°C/W in the T-switch part (A2U12M12W2-F2). Insulation is UL-certified to 2.5kVrms.

 

“Our power modules leverage the properties of silicon carbide and a high thermal performance substrate, resulting in a good low on-resistance per area and switching performance that is virtually independent of temperature,” according to the company.

 

ST T-mosfets in PFC stage

 

T-switch in use

 

Switching at up to 30kHz is envisaged, with efficiency around 98 – 99%, and an embedded thermistor allows a host to keep an eye on temperature.

 

Specifications for the A2F12M12W2-F1 (below left) are similar.

 

Applications are foreseen in industrial motor drives, solar inverters, uninterruptible power supplies and charging stations.