400W S-band power amplifier MMIC

Author: EIS Release Date: Sep 20, 2022

Eindhoven-based Altum RF has created a 400W S-band power amplifier microwave IC (MMIC) with a 50-55% PAE (power added efficiency).

 

Operating between 2.8 and 3.3GHz, it was developed with Netherlands research organisation TNO, which has been working on phased-array high power amplifier research for more that 30 years, according to Altum, and Taiwan’s Win Semiconductors, on whose NP45-11 50V 0.45μm RF GaN-on-SiC HEMT foundry process the chip was made.

 

“It is a privilege to collaborate with these two organisations. We are looking forward to industrialising this technology for S-band radar,” said Altum marketing v-p Niels Kramer, adding: “Altum RF continues its to expand our product portfolio from X-band and beyond.”

 

Electronics Weekly has requested more technical information – watch this space.

 

So far. Altum has only said that it has in-built moisture protection, allowing a plastic package to be used.