ST to build $728m SiC substrate plant in Catania

Author: EIS Release Date: Oct 12, 2022

ST is to build a $728 million SiC substrate manufacturing plant in Catania, Sicily with €292.5 million coning from the Italian government.

 

“ST is transforming its global manufacturing operations, with additional capacity in 300mm manufacturing and a strong focus on wide bandgap semiconductors to support its $20+B revenue ambition. We are expanding our operations in Catania, the center of our power semiconductor expertise and where we already have integrated research, development and manufacturing of SiC with strong collaboration with Italian research entities, universities and suppliers” says ST CEO Jean-Marc Chery, (pictured) “this new facility will be key to our vertical integration in SiC, reinforcing our SiC substrate supply as we further ramp up volumes to support our automotive and industrial customers in their shift to electrification and higher efficiency”.

 

The five-year investment, due to be completed in 2026. is part of the country’s National Recovery and Resilience Plan, with the grant approved by the European Commission.

 

“The Italian measure approved today will strengthen Europe’s semiconductors supply chain, helping us deliver our green and digital transition,” EC evp Margrethe Vestager, “the measure will ensure that our industry has a reliable source of innovative substrates for power efficient chips.”

 

ST will build the new plant at its Catania site, alongside an existing SiC device manufacturing facility. It will create around 700 additional jobs, the group said.

 

Production is expected to start in 2023, with a balanced supply of SiC substrate between internal and merchant supply, ST said