GloFo gets $30m to develop GaN-on-Silicon process

Author: EIS Release Date: Oct 25, 2022

Globalfoundries has received $30 million in federal funding to advance the development and production of GaN on silicon at its facility in Essex Junction, Vermont.

 

The funding will allow the company to purchase tools and extend development and implementation of 200mm GaN wafer manufacturing.

 

The incorporation of scaled GaN manufacturing into the fab’s capabilities enables it to make ICs for high-power applications including electric vehicles, industrial motors, and energy applications.ISSCC 2022 Paper14.1 GaN power

 

The agreement was entered into by the Defense Microelectronics Activity via the Trusted Access Program Office (TAPO) of the U.S. Department of Defense.

 

TAPO’s primary mission is to procure advanced semiconductors for the Departments most critical and sensitive weapons systems platforms.

 

TAPO has been supporting dual use (both civilian and military applications) GaN on silicon development efforts since 2019 as GaN provides a stable semiconductor suitable in high power, high frequency devices the DoD needs to maintain technology advantage for the United States.

 

This current development phase plans to leverage previous TAPO successes and continue maturing this dual use technology