Electronica: EPC launches Gen6 GaN power transistors

Author: EIS Release Date: Nov 22, 2022

GaN semiconductor maker EPC has announced an 80V 4mΩ power transistor at Electronica in Munich, with a 1.5 x 2.5mm footprint and “double the power density compared to EPC’s prior-generation products”, said the company.

 

EPC Gen6 GaN graph

“This is just the first product of a new generation of discrete transistors and integrated circuits for EPC,” said company CEO and co-founder Alex Lidow. “With the launch of the EPC2619, EPC continues to keep GaN power devices on a path reminiscent of Moore’s Law.” – The new generation has been dubbed Gen6.

 

EPC Gen6 GaN dcdc graph

 

Its specific on-resistance equates to 15mΩ.mm2 and EPC said its Rds(on).Qd makes it suitable for high-frequency hard-switched 24 – 48V buck, buck-boost and boost applications, while the typical Rds(on).Qoss of 87mΩ.nC suits it to soft-switching in the primary full bridge for LLC-based dc-dc converters.

 

 

EPC Gen6 GaN eval board

 

EPC90153 is the associated 51 x 51mm half-bridge development board designed for 80V maximum device voltage and 30A maximum output.

 

The part is designed for motor drives, dc-dc converters, solar optimisers and synchronous rectification at 12 – 20V, for example in eBikes, eScooters, power tools, chargers, adaptors and TV power supplies.