Mosfets optimised for hot-swap in-rush

Author: EIS Release Date: Nov 28, 2022

Nexperia has introduced mosfets optimised for 12V hot-swap applications.

 

Nexperia hot swap controller and mosfet

 

The 25V and 30V devices are intended to combine a wide safe operating area (SOA) and low on-resistance.

 

“PSMNR67-30YLE ASFET delivers 2.2x stronger SOA: 12V at 100ms) than previous technologies while having a maximum Rds(on) as low as 0.7mΩ [Vg=10V],” according to the company. “The Spirito effect, represented by the steeper downward slope found on SOA curves at higher voltages, has been eliminated, while performance is maintained across the full voltage and temperature range compared to unoptimised devices.”

 

Nexperia PSMNR67-30YLE hotswap mosfet

 

Three 25V and five 30V mosfets, including the one above, have been introduced, in LFPAK56 or LFPAK56E packages, with Rds(on) ranging across 0.7 to 2mΩ. Two additional 25V products are in the pipeline with on-resistance as low as 0.5mΩ.

 

The devices are characterised at 125°C and are provided with hot SOA curves (left) in the datasheets.

 

In the part number, it looks like – but do check for yourself if it is important – that the number after ‘PSMN’ is the typical on-resistance (Vg=10V), so R67 is ~0.67mΩ and 1R6 is ~1.6mΩ, and the numbers after the dash indicate operating voltage. Here is a list of the parts:

 

PSMNR67-30YLE

PSMNR82-30YLE

PSMNR89-25YLE

PSMN1R0-30YLE

PSMNR98-25YLE

PSMN1R1-30YLE

PSMN1R6-25YLE

PSMN2R1-30YLE

PSMNR56-25YLE

PSMNR68-25YLE

Applications are foreseen in data centre servers and communications equipment.