Author: EIS Release Date: Mar 12, 2020
Belgian hi-rel specialist Cissoid has announced a 1.2kV 450A silicon carbide three-phase mosfet power module with drive electronics, for automotive use.
“Developing and optimising fast-switching SiC power modules and driving them reliably remains a challenge” according to Cissoid CEO Dave Hutton. “This SiC intelligent power module is the outcome of years of experience in the development of power modules and gate drivers for extreme temperature and voltage environments. With it, we are happy to support the automotive industry in its transition towards highly efficient e-mobility solutions.”
On resistance is 3.25mΩ and switching losses are 8.3mJ turn-on and 11.2mJ turn-off at 600V 300A – reducing losses by at least 3x compared with IGBT power modules, claims Cissoid.
The AlSiC pin-fin baseplate is water-cooled, with a junction-to-fluid thermal resistance of 0.15°C/W. And operation is specified up to 175°C at the junctions and -40°C.
Three on-board 5W isolated power supplies are built-in to allow the power channels to switch at up to 25kHz in ambients up to 125°C. Peak gate current is 10A and >50kV/µs immunity claimed. Isolation is rated at 3.6kV (50Hz, 1min). Primary-secondary capacitance is typically 11pF/phase.
Inputs are active-high 5V Schmitt trigger input, with an active-low option, and isolated per-phase open-drain fault reporting is provided, with a per-side option.
Included protections are under-voltage lock-out (UVLO), active miller clamping, desaturation detection and soft shut-down.
The part number is CXT-PLA3SA12450., and the module is 103 x 154 x 43mm
Use is expected in electrical vehicles motor drives, heavy-duty motor drives and heavy-duty active rectifiers
Industrial Motor Drives