1Tbit flash from Kioxia and Western Digital

Author: EIS Release Date: Apr 10, 2023

Scaling and wafer bonding in a cooperation between Kioxia and Western Digital have created a “218 layer 3D flash 1Tbit triple-level-cell and quad-level-cell with four planes, and features lateral shrink technology to increase bit density by over 50%,” according to Kioxia.

 

Kioxia Western Digital flash

Co-developed CBA (CMOS directly bonded to array) technology allows CMOS wafers and cell array wafers to be optimised and manufactured separately, and then bonded together in a stack for high bit density and high IO speed – 3.2Gbit/s is claimed for the latter.

 

“Through our engineering partnership, we have launched the eighth-generation ‘BiCS’ flash, with the industry’s highest bit density,” said Kioxia CTO Masaki Momodomi. “By applying CBA technology and scaling, we’ve advanced our flash memory for use in applications including smartphones, IoT devices and data centres.”