Author: EIS Release Date: May 23, 2023
NXP and TSMC have delivered automotive embedded MRAM in a 16 nm FinFET process.
As automakers transition to software-defined vehicles (SDVs), they need to support multiple generations of software upgrades on a single hardware platform.
Combining NXP’s S32 automotive processors with 16 nm FinFET technology provides the hardware platform for this transition.
MRAM can update 20MB of code in ~3 seconds compared to flash memories that take about 1 minute, minimizing the downtime associated with software updates and enabling carmakers to eliminate bottlenecks that arise from long module programming times.
Moreover, MRAM provides for automotive mission profiles by offering up to one million update cycles, a level of endurance 10x greater than flash and other emerging memory technologies.
SDVs enable carmakers to roll out new comfort, safety and convenience features via over-the-air (OTA) updates, extending the life of the vehicle and enhancing its functionality, appeal, and profitability.
As software-based features become more widespread in vehicles, the frequency of updates will increase, and MRAM’s speed and robustness will become even more important.
TSMC’s 16FinFET embedded MRAM technology exceeds the rigorous requirements of automotive applications with its one-million cycle endurance, support for solder reflow, and 20-year data retention at 150°C.