Cambridge GaN Devices (CGD). the GaN-based power IC soecialist, has signed a distribution deal with DigiKey.

“This agreement is a significant step for CGD as we are scaling-up the business and building a GaN ecosystem that will help engineers explore and utilise the benefits of ICeGaN for high voltage power conversion,” says CGD chief comnercial officer Andrea Bricconi.

 

“DigiKey is always looking to fill the gaps for our customer base,” says DigiKey vp Missy Hall, “and the addition of CGD to our supplier community is one more gap filled and one more step towards great innovation.”

Recently, CGD launched its 650 V H2 series ICeGaN gallium nitride HEMT family. The new parts reduce design complexity as they can be driven using commercially-available industry gate drivers.

 

In terms of efficiency, ICeGaN HEMTs feature a QG that is 10x lower than silicon parts and a QOSS that is 5x less. This greatly reduces switching losses, enabling industry-leading efficiency figures that result in reductions in system size, weight and cost.

H2 Series ICeGaN HEMTs also address reliability and ruggedness concerns by employing CGD’s smart gate interface that virtually eliminates typical e-mode GaN weaknesses.

Devices feature improved over-voltage robustness, higher noise-immune threshold, dV/dt suppression and ESD protection.