Micron is delivering qualification samples of its UFS 4.0 mobile NAND, built on a 232-layer process.

The memory comes in capacities up to 1TB  and is being shipped to selected smartphone manufacturers and chipset vendors.

 

It is Micron’s first mobile memory built on the 232-layer TLC process.

It is also the first UFS 4.0 memory to use six-plane NAND architecture, which allows  higher random read throughput

 

It has up to 4300 MBps sequential read and 4000 MBps sequential write speed.

Micron is sampling 256GB, 512GB and 1TB devices.

The company will begin high-volume production of the chip  in H2.