Dual 12V mosfet is drain-connected for battery packs

Author: EIS Release Date: Jul 27, 2023

Toshiba is aiming at battery pack protection with a 12V 20A common-drain dual n-channel mosfet.

 

Toshiba SSM14N956L drain connected dual n mosfet

The new part is SSM14N956L and “uses Toshiba’s micro-process, in common with the already released 13.5A SSM10N954L”, according to the company.

 

SSM10N954L battery protection dual mosfet appApplication circuit for the earlier SSM10N954L dual mosfet

 

Alongside the mosfets are clamp devices to protects the gates from excessive voltage as well as gate series resistors.

 

 

 

 

Packaging is 2.74 x 3.0mm x 85μm chip-scale package (Toshiba’s TCSPED-302701 package).

 

At 25°C and 10A, on-resistance is typically 1mΩ at 4.5Vg, 1.25mΩ at 3.1V and 1.6mΩ at 2.5V (3.2mΩ max at 2.5V)

 

“Additionally, the process delivers gate-source leakage current of ±1µAmax,” added Toshiba.

 

Applications are expected in smartphones, tablets, power banks and digital cameras.