NSREC: 40V rad-hard GaN power transistors for space

Author: EIS Release Date: Jul 31, 2023

Efficient Power Conversion has added two 40V GaN transistors to its radiation-hardened high-reliability portfolio.

 

EPC7001 EPC7002 GaN radiation tolerant

EPC7001 has 4mΩ on-resistance, 60A (250A 300µs pulse 25°C) capacity and occupies 7mm2

 

EPC7002 turns on to 14.5mΩ and can handle 10A (62A 300µs pulse 25°C) through its 1.87mm2 footprint

 

 

“EPC’s rad hard devices exhibit superior resistance to radiation compared to traditional silicon solutions,” said EPC. “Both new devices have a total dose radiation rating greater than 1,000k Rad(Si) and SEE immunity for LET of 83.7MeV/mg/cm2 with Vds up to 100% of rated breakdown.”

 

 

 

The sizes above are for chip-scale packaging (photo, inset), with 95% Pb 5% Sn solder. Packaged versions are available from sister company EPC Space.

 

The larger package (60A part) has a junction-to-case thermal resistance of 0.8°C/W, and the smaller one 3.6°C/W.

 

Gates on both can cope with -4 and +6V max, and are intended to be driven at 5V, where leakage is typically 200μV at 125°C (3mA max) for the 60A part and 60μV (3mA max) for the 10A one.

 

Total gate charges are typically 11nC (30A 5Vg 20Vd), or 2.9nC (10A) for the smaller device.

 

Applications are foreseen in dc-dc power converters, motor drives, lidar, and ion thrusters. “They are particularly well-suited for satellites operating in both low earth orbit and geosynchronous Orbit, as well as avionics systems,” said EPC.

 

Engineering samples are available.