Power Integrations has announced AEC-Q100 automotive certification for a single-channel gate driver for silicon carbide (SiC) mosfets switching up to 300kW.

Called SIC118xKQ, there are two parts:

• SIC1182KQ – 1.2kV
• SIC1181KQ – 750V

They provide up to 8A and suit SiC transistors handling 600-800A with standard gate-emitter voltages from +15V, with various negative voltages from -3V to -15V.

Safety features include: drain to source voltage monitoring, primary under-voltage lock-out, secondary under-voltage lock-out and current-limited gate drive, as well as active clamping (AAC) that facilitates safe operation and soft turn-off under fault conditions – the latter working with Vds monitoring ensures safe turn-off in less than 2µs during short-circuit.

SIC118xKQ-Automotive-Application-533“Gate-drive control and AAC features allow gate resistance to be minimised,” according to Power Integrations. “This reduces switching losses, maximising inverter efficiency.”

Additional features include a rail-to-rail output with temperature and process compensated output impedance, said to guarantee safe operation even in harsh conditions.

An inductive isolated link pushes data back and forth between primary and secondary sides without the need for opto-couplers or capacitive coupling.

“Even if a power device causes catastrophic driver failure, the isolation remains intact ensuring that no part of the chassis will carry life-threatening high voltages,” said Power Integrations marketing director Michael Hornkamp.

The package , called eSOP, provides ≥9.5 mm of creepage and clearance, “using material that has the highest CTI level (CTI =600) per IEC 60112″, said the company.

“Silicon carbide mosfet technology opens the door for smaller, lighter automotive inverter systems,” said Hornkamp. “Switching speeds and operating frequencies are increasing; our low gate resistor values maintain switching efficiency, while our fast short circuit response quickly protects the system in the event of a fault.”