EPC aims high with 300V space-grade GaN power transistor

Author: EIS Release Date: Sep 6, 2023

EPC Space has introduced radiation-hardened gallium nitride devices for space-borne power converters and other rugged environments.

 

EPC7020G G package image

There are two devices, one rated at 200V and the other at 300V:

 

EPC7020G  – 200V, 14.5mΩ, 80A (pictured)

EPC7030G – 300V, 32mΩ, 50A

“Applications including power supplies for satellites and space mission equipment, motor drives for robotics, instrumentation, reaction wheels and deep space probes,” said EPC.

 

 

Taking the 300V version as an example, max on-resistance is 32mΩ and typical gate charge is 15nC (with 4nC to the drain). Reverse recovery charge, as every GaN device manufacturer loves to point out, is 0nC.

 

 

Continuous max drain current is 50A (at 5Vgs) and pulses up to 200A can be withstood (25˚C, 300µs).

 

Gate-to-source limits are -4 and +6V. Operation is over -55 to +150°C.

 

Electrical characteristics are available with radiation up to 1,000krads, and single-event LET is 50MeV/mg/cm2 for xenon and 83.7 for gold.

 

The package for both devices, called ‘G’, is hermetic and measures 8 x 5.6mm.

 

“The G-package family offers the lowest on-resistance of any packaged rad hard transistor currently on the market,” claimed company CEO Bel Lazar.