Toshiba has launched a 200A 40V 0.66mΩmax automotive grade n-channel mosfet that can handle 600A pulses in a 7 x 8.44 x 2.3mm gull-wing package.

Toshiba automotive mosfet in STOGL package
“Automotive safety-critical applications such as steering, braking and autonomous driving systems generally require more devices than other systems to meet redundancy requirements. Here, a power mosfet with high current density is required due to the size constraints,” according to the company, which explained: “The 200A rating is higher than that achieved by Toshiba’s 6.5 x 9.5mm DPAK+ package.”

The package is new to Toshiba, which has branded it S-TOGL for ‘small transistor outline gull-wing  leads’.

Inside, it is post-less and has a multi-pin source lead structure to decrease resistance. Gull-wing leads are used to improve solder joint reliability in the automotive environment by reducing mounting stress.

The transistor is the XPJR6604PB, which combines the package with a die made on Toshiba’s U-MOS IX-H process to achieve its 530μΩ typical and 660μΩ maximum on-resistance (10Vgate, 100A drain).

This represents “an ~11% reduction when compared to Toshiba’s existing TO-220SM(W) packaged TKR74F04PB”, said the company, “Compared to this device, the mounting area has reduced by around 55% while retaining the channel-to-case thermal resistance characteristics.”

Both XPJR6604PB and the earlier TKR74F04PB have 0.4°C/W channel-to-case thermal resistance.

XPJR6604PB is also rated for use with 6V on its gate, where on-resistance is typically 0.75mΩ, and  a maximum of 1.16mΩ.

XPJ1R004PB is a similar device, also in S-TOGL, rated at 40V, 160A, 480A pulsed, 1.0mΩmax (10Vgate, 80A drain) and 0.67°C/W.

Qualification is AEC-Q101 in for both new devices, and the channels can operate up to 175°C.

For use in parallel, reels of parts can be shipped in which the gate threshold range does not exceed 400mV.