Hynix has started mass production of the world’s first 321-layer NAND – a triple level cell-based 4D memory with 1Tb capacity.

Following its launch of a  238-layer NAND in June last year, Hynix has become the world’s first supplier of tNAND with over 300 layers by finding a technological breakthrough for stacking.

The 321-layer device offers a 12% improvement write time and a  13% improvement in read time. Compared to the 238-layer device.

The company plans to provide the 321-layer products to customers from the first half of next year.

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Stacking more than 300 layers came into reality as the company successfully adopted the “3 plugs” process technology.

The process  connects three plugs through an optimised follow-up process after three times of plug processes are finished. For the process, Hynix developed a low-stress  material, while introducing the technology that automatically corrects alignments among the plugs.

With the adoption of the same development platform from the 238-high NAND on the 321-high product, the company could also improve the productivity by 59%, compared with the previous generation, by minimizing any impacts from a process switch.