An inauguration ceremony has been held for the $3.2 billion SiC  fab set up as a jv between Sanan Optoelectronics and STMicroelectronics in Chongqing.

An inauguration ceremony has been held for the $3.2 billion SiC  fab set up as a jv between Sanan Optoelectronics and STMicroelectronics in Chongqing.

Sanan has a 51% stake in the jv and ST 49%. It is due to start volume production of 8” SiC ICs in Q4 using ST’s SiC process technology.

When fully completed, in 2028,  the fab will have a capacity of  40k wpm.

 

Alongside the fab, Sanan Opto will independently build and operate an 8-inch SiC substrate manufacturing facility which will supply wafers to the JV under a long-term agreement.

Together, the two facilities will integrate substrate production, epitaxy, IC R&D, manufacturing and sales.