Amongst a flurry of announcements, On Semiconductor has introduced 1.2kV 25, 35, and 50A transfer-moulded IGBT power modules – in converter-inverter-brake (CIB) and converter-inverter (CI) configurations.

Transfer-moulded encapsulation extend cycling lifetime for both temperature and power, according to On.

The modules consist of six 1.2kV IGBTs, six 1.6kV rectifiers, and an NTC thermistor for system level temperature monitoring.

CIB versions have an additional 1.2kV IGBT coupled with a diode and their part numbers end in ‘SG’ (‘S1G’ suffix parts do not get the extra transistor and diode)

NXH25C120L2C2SG-packageThe parts base numbers are (there are variations):

• 25A NXH25C120L2C2
• 35A NXH35C120L2C2/2C2E
• 50A NXH50C120L2C2E (see diagram)

Each is 73 x 40 x 8mm with solderable pins

Other announcements include IGBT and silicon mosfet gate drivers with on-chip galvanic isolation. Called NCD57000 and NCD57001, they deliver 4A and 6A source and sink current respectively, while also integrating desat, Miller clamp and under-voltage lock-out. Looking at the data sheets, the difference is that the 57000 has separate output pins for separate external sink and source resistors to the gate of the driven IGBT, while the 57001 has an internal link and only a single external resistor.

On top of these is NFAM2012L5B, a three-phase 1.2kV 20A module with a full-wave bridge of six IGBTs, plus their drivers (the three upper drivers include isolation. And NFAL5065L4B is similar, but 650V 50A.