Winbond has added sequential read to QSPI NAND flash memories, startign with its W25NxxxJW.

“In sequential read mode, the products achieve the same 52Mbyte/s maximum data rate at 104MHz as in continuous read mode, but with new flexibility to configure the chip’s operation,” according to the company.

Key options are now:

Error correction: While in continuous read, Winbond W25N devices only supports the on-chip 1bit ECC engine, in sequential read mode adopters can use an external ECC engine to implement 4, 8bit or any other length error correction
Both the main memory area and spare memory areas are accessible with a single read command, which is “ideal for code shadowing applications in which low latency and fast boot time are particularly important”, said Winbond
Greater flexibility to configure the data arrangement

1.8V version of the memories are available in 512Mbit, 1Gbit or 2Gbit. 3.0V versions are available in 2Gbit and 4Gbit. All devices perform on-chip bad block management and support an OTP area.

Clock speeds of 104MHz allow the equivalent of 416MHz (104MHz x 4) speed for quad I-O performance using fast read dual/quad I-O instructions.

Operation is over -40°C to +85°C for industrial versions and -40°C to +105°C for ‘industrial plus’ and automotive types.

The parts are made in Taichung Taiwan on a 46nm process and come in 8pin packages: WSON8 (6 x 8mm), WSON8 (5 x 6mm), TFBGA24 (6 x 8mm) or known good die.

Access times

50µs page read with ECC enabled
250µs (typ) page program
2ms (typ) block erase

The quad SPI NAND interface shares the same 6pin signals and QSPI command set as quad SPI NOR flash.