Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks
Internal Part Number | EIS-CSD16322Q5 | |
Lead Free Status / RoHS Status | Contains lead / RoHS compliant by exemption | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Production Status (Lifecycle) | In Production | |
Condition | New & Unused, Original Sealed | |
Product Training Modules | NexFET MOSFET Technology | |
Video File | NexFET Power Block PowerStack™ Packaging Technology Overview | |
Featured Product | Create your power design now with TI’s WEBENCH® Designer | |
PCN Design/Specification | Qualification Revision A 01/Jul/2014 | |
PCN Assembly/Origin | Qualification Assembly/Test Site 03/Mar/2014 Qualification Wire Bond 27/May/2014 Assembly/Test Site Revision C 09/Feb/2015 | |
Manufacturer Product Page | CSD16322Q5 Specifications | |
Standard Package | 2,500 | |
Category | Discrete Semiconductor Products | |
Family | FETs - Single | |
Series | NexFET™ | |
Packaging | Tape & Reel (TR) | |
FET Type | MOSFET N-Channel, Metal Oxide | |
FET Feature | Standard | |
Drain to Source Voltage (Vdss) | 25V | |
Current - Continuous Drain (Id) @ 25°C | 21A (Ta), 97A (Tc) | |
Rds On (Max) @ Id, Vgs | 5 mOhm @ 20A, 8V | |
Vgs(th) (Max) @ Id | 1.4V @ 250µA | |
Gate Charge (Qg) @ Vgs | 9.7nC @ 4.5V | |
Input Capacitance (Ciss) @ Vds | 1365pF @ 12.5V | |
Power - Max | 3.1W | |
Mounting Type | Surface Mount | |
Package / Case | 8-TDFN Exposed Pad | |
Supplier Device Package | 8-SON | |
Weight | 0.001 KG | |
Application | Email for details | |
Alternative Part (Replacement) | CSD16322Q5 | |
Related Links | CSD16, CSD16322Q5 Datasheet, Texas Instruments Distributor |
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