Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks
Internal Part Number | EIS-2SA1020-Y(TE6,F,M) | |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Production Status (Lifecycle) | In Production | |
Condition | New & Unused, Original Sealed | |
Standard Package | 3,000 | |
Category | Discrete Semiconductor Products | |
Family | Transistors (BJT) - Single | |
Series | - | |
Packaging | Tape & Box (TB) | |
Transistor Type | PNP | |
Current - Collector (Ic) (Max) | 2A | |
Voltage - Collector Emitter Breakdown (Max) | 50V | |
Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 1A | |
Current - Collector Cutoff (Max) | 1µA (ICBO) | |
DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 500mA, 2V | |
Power - Max | 900mW | |
Frequency - Transition | 100MHz | |
Mounting Type | Through Hole | |
Package / Case | TO-226-3, TO-92-3 Long Body | |
Supplier Device Package | LSTM | |
Weight | 0.001 KG | |
Application | Email for details | |
Alternative Part (Replacement) | 2SA1020-Y(TE6,F,M) | |
Related Links | 2SA1020-Y, 2SA1020-Y(TE6,F,M) Datasheet, Toshiba Semiconductor & Storage Distributor |
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