Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks
| Internal Part Number | EIS-2SJ652-1E | |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Production Status (Lifecycle) | In Production | |
| Condition | New & Unused, Original Sealed | |
| PCN Assembly/Origin | Frabrication Site Change 27/Aug/2014 Wafer Fab Transfer 12/Jun/2015 | |
| Standard Package | 50 | |
| Category | Discrete Semiconductor Products | |
| Family | FETs - Single | |
| Series | - | |
| Packaging | Tube | |
| FET Type | MOSFET P-Channel, Metal Oxide | |
| FET Feature | Logic Level Gate, 4V Drive | |
| Drain to Source Voltage (Vdss) | 60V | |
| Current - Continuous Drain (Id) @ 25°C | 28A (Ta) | |
| Rds On (Max) @ Id, Vgs | 38 mOhm @ 14A, 10V | |
| Vgs(th) (Max) @ Id | - | |
| Gate Charge (Qg) @ Vgs | 80nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 4360pF @ 20V | |
| Power - Max | 2W | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 Full Pack | |
| Supplier Device Package | TO-220F-3SG | |
| Weight | 0.001 KG | |
| Application | Email for details | |
| Alternative Part (Replacement) | 2SJ652-1E | |
| Related Links | 2SJ6, 2SJ652-1E Datasheet, ON Semiconductor Distributor | |
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