Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks
Internal Part Number | EIS-3N163-E3 | |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Production Status (Lifecycle) | In Production | |
Condition | New & Unused, Original Sealed | |
PCN Assembly/Origin | SIL-062-2014-Rev-0 30/May/2014 | |
Standard Package | 200 | |
Category | Discrete Semiconductor Products | |
Family | FETs - Single | |
Series | - | |
Packaging | Tube | |
FET Type | MOSFET P-Channel, Metal Oxide | |
FET Feature | Standard | |
Drain to Source Voltage (Vdss) | 40V | |
Current - Continuous Drain (Id) @ 25°C | 50mA (Ta) | |
Rds On (Max) @ Id, Vgs | 250 Ohm @ 100µA, 20V | |
Vgs(th) (Max) @ Id | 5V @ 10µA | |
Gate Charge (Qg) @ Vgs | - | |
Input Capacitance (Ciss) @ Vds | 3.5pF @ 15V | |
Power - Max | 375mW | |
Mounting Type | Through Hole | |
Package / Case | TO-206AF, TO-72-4 Metal Can | |
Supplier Device Package | TO-72 | |
Weight | 0.001 KG | |
Application | Email for details | |
Alternative Part (Replacement) | 3N163-E3 | |
Related Links | 3N16, 3N163-E3 Datasheet, Vishay/Siliconix Distributor |
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