Microsemi Power Products APT8M100B
- Mfg. Part Number
- APT8M100B
- Manufacturer
- Microsemi Power Products
- Product Category
- FETs - Single
- Brief Description
- MOSFET N-CH 1000V 8A TO-247
- Datasheet Download
- APT8M100B.pdf
Availability of APT8M100B
Available Quantity
5230 Pieces
Can ship today
Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks
- Marketing Price
- $ 2.79398
- Our Price
- Quote by Email
EIS Components is the stocking Distributor of APT8M100B, we specialize in Microsemi Power Products all series electronic components. APT8M100B can be shipped within 24 hours after order. If you have any demands for APT8M100B, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
- APT8M100B Order Process
- Add Parts to RFQ form
- Submit RFQ
- We reply within 24 hours
- You confirm order
- Payment
- Ship out your order
Specifications of
APT8M100B
| Internal Part Number | EIS-APT8M100B | |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Production Status (Lifecycle) | In Production | |
| Condition | New & Unused, Original Sealed | |
| Standard Package | 30 | |
| Category | Discrete Semiconductor Products | |
| Family | FETs - Single | |
| Series | - | |
| Packaging | Tube | |
| FET Type | MOSFET N-Channel, Metal Oxide | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 1000V (1kV) | |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) | |
| Rds On (Max) @ Id, Vgs | 1.8 Ohm @ 4A, 10V | |
| Vgs(th) (Max) @ Id | 5V @ 1mA | |
| Gate Charge (Qg) @ Vgs | 60nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 1885pF @ 25V | |
| Power - Max | 290W | |
| Mounting Type | Through Hole | |
| Package / Case | TO-247-3 | |
| Supplier Device Package | TO-247 [B] | |
| Weight | 0.001 KG | |
| Application | Email for details | |
| Alternative Part (Replacement) | APT8M100B | |
| Related Links | APT8, APT8M100B Datasheet, Microsemi Power Products Distributor | |
APT8M100B Details Description
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