Infineon Technologies BSB012N03LX3 G

BSB012N03LX3 G picture photo
Mfg. Part Number
BSB012N03LX3 G
Manufacturer
Product Category
FETs - Single
Brief Description
MOSFET N-CH 30V 180A 2WDSON
Datasheet Download
BSB012N03LX3 G.pdf
Availability of BSB012N03LX3 G

Available Quantity

5020 Pieces

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Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

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EIS Components is the stocking Distributor of BSB012N03LX3 G, we specialize in Infineon Technologies all series electronic components. BSB012N03LX3 G can be shipped within 24 hours after order. If you have any demands for BSB012N03LX3 G, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
BSB012N03LX3 G Order Process
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Specifications of BSB012N03LX3 G
Internal Part NumberEIS-BSB012N03LX3 G
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)3 (168 Hours)
Production Status (Lifecycle)Obsolete / Discontinued
ConditionNew & Unused, Original Sealed
PCN Obsolescence/ EOLMultiple Devices 12/May/2009
Multiple Devices 06/Oct/2014
Standard Package5,000
Category Discrete Semiconductor Products
FamilyFETs - Single
SeriesOptiMOS™
PackagingTape & Reel (TR)
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C39A (Ta), 180A (Tc)
Rds On (Max) @ Id, Vgs1.2 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) @ Vgs169nC @ 10V
Input Capacitance (Ciss) @ Vds16900pF @ 15V
Power - Max2.8W
Mounting TypeSurface Mount
Package / Case3-WDSON
Supplier Device PackageMG-WDSON-2, CanPAK M™
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)BSB012N03LX3 G
Related LinksBSB012N, BSB012N03LX3 G Datasheet, Infineon Technologies Distributor
BSB012N03LX3 G Details Description
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