Infineon Technologies BSC028N06LS3 G

BSC028N06LS3 G picture photo
Mfg. Part Number
BSC028N06LS3 G
Manufacturer
Product Category
FETs - Single
Brief Description
MOSFET N-CH 60V 100A TDSON-8
Datasheet Download
BSC028N06LS3 G.pdf
Availability of BSC028N06LS3 G

Available Quantity

30020 Pieces

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Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

Marketing Price
$ 0.82368
Our Price
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QUANTITY

 

EIS Components is the stocking Distributor of BSC028N06LS3 G, we specialize in Infineon Technologies all series electronic components. BSC028N06LS3 G can be shipped within 24 hours after order. If you have any demands for BSC028N06LS3 G, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
BSC028N06LS3 G Order Process
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Specifications of BSC028N06LS3 G
Internal Part NumberEIS-BSC028N06LS3 G
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)In Production
ConditionNew & Unused, Original Sealed
PCN OtherMultiple Changes 09/Jul/2014
Standard Package5,000
Category Discrete Semiconductor Products
FamilyFETs - Single
SeriesOptiMOS™
PackagingTape & Reel (TR)
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C23A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs2.8 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id2.2V @ 93µA
Gate Charge (Qg) @ Vgs175nC @ 10V
Input Capacitance (Ciss) @ Vds13000pF @ 30V
Power - Max139W
Mounting TypeSurface Mount
Package / Case8-PowerTDFN
Supplier Device PackagePG-TDSON-8
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)BSC028N06LS3 G
Related LinksBSC028N, BSC028N06LS3 G Datasheet, Infineon Technologies Distributor
BSC028N06LS3 G Details Description
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