Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks
Internal Part Number | EIS-BSC028N06LS3 G | |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Production Status (Lifecycle) | In Production | |
Condition | New & Unused, Original Sealed | |
PCN Other | Multiple Changes 09/Jul/2014 | |
Standard Package | 5,000 | |
Category | Discrete Semiconductor Products | |
Family | FETs - Single | |
Series | OptiMOS™ | |
Packaging | Tape & Reel (TR) | |
FET Type | MOSFET N-Channel, Metal Oxide | |
FET Feature | Logic Level Gate | |
Drain to Source Voltage (Vdss) | 60V | |
Current - Continuous Drain (Id) @ 25°C | 23A (Ta), 100A (Tc) | |
Rds On (Max) @ Id, Vgs | 2.8 mOhm @ 50A, 10V | |
Vgs(th) (Max) @ Id | 2.2V @ 93µA | |
Gate Charge (Qg) @ Vgs | 175nC @ 10V | |
Input Capacitance (Ciss) @ Vds | 13000pF @ 30V | |
Power - Max | 139W | |
Mounting Type | Surface Mount | |
Package / Case | 8-PowerTDFN | |
Supplier Device Package | PG-TDSON-8 | |
Weight | 0.001 KG | |
Application | Email for details | |
Alternative Part (Replacement) | BSC028N06LS3 G | |
Related Links | BSC028N, BSC028N06LS3 G Datasheet, Infineon Technologies Distributor |
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