Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks
Internal Part Number | EIS-BSC082N10LS G | |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Production Status (Lifecycle) | In Production | |
Condition | New & Unused, Original Sealed | |
PCN Other | Multiple Changes 09/Jul/2014 | |
Standard Package | 5,000 | |
Category | Discrete Semiconductor Products | |
Family | FETs - Single | |
Series | OptiMOS™ | |
Packaging | Tape & Reel (TR) | |
FET Type | MOSFET N-Channel, Metal Oxide | |
FET Feature | Logic Level Gate | |
Drain to Source Voltage (Vdss) | 100V | |
Current - Continuous Drain (Id) @ 25°C | 13.8A (Ta), 100A (Tc) | |
Rds On (Max) @ Id, Vgs | 8.2 mOhm @ 100A, 10V | |
Vgs(th) (Max) @ Id | 2.4V @ 110µA | |
Gate Charge (Qg) @ Vgs | 104nC @ 10V | |
Input Capacitance (Ciss) @ Vds | 7400pF @ 50V | |
Power - Max | 156W | |
Mounting Type | Surface Mount | |
Package / Case | 8-PowerTDFN | |
Supplier Device Package | PG-TDSON-8 | |
Weight | 0.001 KG | |
Application | Email for details | |
Alternative Part (Replacement) | BSC082N10LS G | |
Related Links | BSC082, BSC082N10LS G Datasheet, Infineon Technologies Distributor |
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