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Infineon Technologies BSC082N10LS G

BSC082N10LS G picture photo
Mfg. Part Number
BSC082N10LS G
Manufacturer
Product Category
FETs - Single
Brief Description
MOSFET N-CH 100V 100A TDSON-8
Datasheet Download
BSC082N10LS G.pdf
Availability of BSC082N10LS G

Available Quantity

10020 Pieces

Can ship today

Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

Marketing Price
$ 0.79200
Our Price
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QUANTITY

 

EIS Components is the stocking Distributor of BSC082N10LS G, we specialize in Infineon Technologies all series electronic components. BSC082N10LS G can be shipped within 24 hours after order. If you have any demands for BSC082N10LS G, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
BSC082N10LS G Order Process
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Specifications of BSC082N10LS G
Internal Part NumberEIS-BSC082N10LS G
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)In Production
ConditionNew & Unused, Original Sealed
PCN OtherMultiple Changes 09/Jul/2014
Standard Package5,000
Category Discrete Semiconductor Products
FamilyFETs - Single
SeriesOptiMOS™
PackagingTape & Reel (TR)
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C13.8A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs8.2 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id2.4V @ 110µA
Gate Charge (Qg) @ Vgs104nC @ 10V
Input Capacitance (Ciss) @ Vds7400pF @ 50V
Power - Max156W
Mounting TypeSurface Mount
Package / Case8-PowerTDFN
Supplier Device PackagePG-TDSON-8
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)BSC082N10LS G
Related LinksBSC082, BSC082N10LS G Datasheet, Infineon Technologies Distributor
BSC082N10LS G Details Description
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