Infineon Technologies BSC12DN20NS3 G

BSC12DN20NS3 G picture photo
Mfg. Part Number
BSC12DN20NS3 G
Manufacturer
Product Category
FETs - Single
Brief Description
MOSFET N-CH 200V 11.3A 8TDSON
Datasheet Download
BSC12DN20NS3 G.pdf
Availability of BSC12DN20NS3 G

Available Quantity

10020 Pieces

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Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

Marketing Price
$ 0.46116
Our Price
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QUANTITY

 

EIS Components is the stocking Distributor of BSC12DN20NS3 G, we specialize in Infineon Technologies all series electronic components. BSC12DN20NS3 G can be shipped within 24 hours after order. If you have any demands for BSC12DN20NS3 G, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
BSC12DN20NS3 G Order Process
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Specifications of BSC12DN20NS3 G
Internal Part NumberEIS-BSC12DN20NS3 G
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)In Production
ConditionNew & Unused, Original Sealed
Standard Package5,000
Category Discrete Semiconductor Products
FamilyFETs - Single
SeriesOptiMOS™
PackagingTape & Reel (TR)
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C11.3A (Tc)
Rds On (Max) @ Id, Vgs125 mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id4V @ 25µA
Gate Charge (Qg) @ Vgs8.7nC @ 10V
Input Capacitance (Ciss) @ Vds680pF @ 100V
Power - Max50W
Mounting TypeSurface Mount
Package / Case8-PowerTDFN
Supplier Device PackagePG-TDSON-8
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)BSC12DN20NS3 G
Related LinksBSC12DN, BSC12DN20NS3 G Datasheet, Infineon Technologies Distributor
BSC12DN20NS3 G Details Description
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