Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks
Internal Part Number | EIS-BSH111BKR | |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Production Status (Lifecycle) | In Production | |
Condition | New & Unused, Original Sealed | |
Featured Product | 55 V, N-Channel Trench MOSFET | |
Standard Package | 1 | |
Category | Discrete Semiconductor Products | |
Family | FETs - Single | |
Series | - | |
Packaging | Cut Tape (CT) | |
FET Type | MOSFET N-Channel, Metal Oxide | |
FET Feature | Standard | |
Drain to Source Voltage (Vdss) | 55V | |
Current - Continuous Drain (Id) @ 25°C | 210mA (Ta) | |
Rds On (Max) @ Id, Vgs | 4 Ohm @ 200mA, 4.5V | |
Vgs(th) (Max) @ Id | 1.3V @ 250µA | |
Gate Charge (Qg) @ Vgs | 0.5nC @ 4.5V | |
Input Capacitance (Ciss) @ Vds | 30pF @ 30V | |
Power - Max | 302mW | |
Mounting Type | Surface Mount | |
Package / Case | TO-236-3, SC-59, SOT-23-3 | |
Supplier Device Package | TO-236AB | |
Weight | 0.001 KG | |
Application | Email for details | |
Alternative Part (Replacement) | BSH111BKR | |
Related Links | BSH1, BSH111BKR Datasheet, NXP Semiconductors/Freescale Semiconductor, Inc. Distributor |
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