Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks
Internal Part Number | EIS-BSP299 E6327 | |
Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Production Status (Lifecycle) | In Production | |
Condition | New & Unused, Original Sealed | |
PCN Obsolescence/ EOL | Multiple Devices 28/Mar/2008 | |
Standard Package | 1,000 | |
Category | Discrete Semiconductor Products | |
Family | FETs - Single | |
Series | SIPMOS® | |
Packaging | Tape & Reel (TR) | |
FET Type | MOSFET N-Channel, Metal Oxide | |
FET Feature | Standard | |
Drain to Source Voltage (Vdss) | 500V | |
Current - Continuous Drain (Id) @ 25°C | 400mA (Ta) | |
Rds On (Max) @ Id, Vgs | 4 Ohm @ 400mA, 10V | |
Vgs(th) (Max) @ Id | 4V @ 1mA | |
Gate Charge (Qg) @ Vgs | - | |
Input Capacitance (Ciss) @ Vds | 400pF @ 25V | |
Power - Max | 1.8W | |
Mounting Type | Surface Mount | |
Package / Case | TO-261-4, TO-261AA | |
Supplier Device Package | PG-SOT223-4 | |
Weight | 0.001 KG | |
Application | Email for details | |
Alternative Part (Replacement) | BSP299 E6327 | |
Related Links | BSP299, BSP299 E6327 Datasheet, Infineon Technologies Distributor |
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