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Infineon Technologies BSZ086P03NS3E G

BSZ086P03NS3E G picture photo
Mfg. Part Number
BSZ086P03NS3E G
Manufacturer
Product Category
FETs - Single
Brief Description
MOSFET P-CH 30V 40A TSDSON-8
Datasheet Download
BSZ086P03NS3E G.pdf
Availability of BSZ086P03NS3E G

Available Quantity

5020 Pieces

Can ship today

Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

Marketing Price
$ 0.26676
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EIS Components is the stocking Distributor of BSZ086P03NS3E G, we specialize in Infineon Technologies all series electronic components. BSZ086P03NS3E G can be shipped within 24 hours after order. If you have any demands for BSZ086P03NS3E G, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
BSZ086P03NS3E G Order Process
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Specifications of BSZ086P03NS3E G
Internal Part NumberEIS-BSZ086P03NS3E G
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)In Production
ConditionNew & Unused, Original Sealed
PCN OtherMultiple Changes 09/Jul/2014
Standard Package5,000
Category Discrete Semiconductor Products
FamilyFETs - Single
SeriesOptiMOS™
PackagingTape & Reel (TR)
FET TypeMOSFET P-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C13.5A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs8.6 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id1.9V @ 105µA
Gate Charge (Qg) @ Vgs57.5nC @ 10V
Input Capacitance (Ciss) @ Vds4785pF @ 15V
Power - Max69W
Mounting TypeSurface Mount
Package / Case8-PowerTDFN
Supplier Device PackagePG-TSDSON-8 (3.3x3.3)
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)BSZ086P03NS3E G
Related LinksBSZ086P, BSZ086P03NS3E G Datasheet, Infineon Technologies Distributor
BSZ086P03NS3E G Details Description
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