NXP Semiconductors/Freescale Semiconductor, Inc. BUK969R3-100E,118

BUK969R3-100E,118 picture photo
Mfg. Part Number
BUK969R3-100E,118
Manufacturer
Product Category
FETs - Single
Brief Description
MOSFET N-CH 100V 100A D2PAK
Datasheet Download
BUK969R3-100E,118.pdf
Availability of BUK969R3-100E,118

Available Quantity

5020 Pieces

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Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

Marketing Price
$ 0.88686
Our Price
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QUANTITY

 

EIS Components is the stocking Distributor of BUK969R3-100E,118, we specialize in NXP Semiconductors/Freescale Semiconductor, Inc. all series electronic components. BUK969R3-100E,118 can be shipped within 24 hours after order. If you have any demands for BUK969R3-100E,118, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
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Specifications of BUK969R3-100E,118
Internal Part NumberEIS-BUK969R3-100E,118
Lead Free Status / RoHS StatusLead free by exemption / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)In Production
ConditionNew & Unused, Original Sealed
PCN Assembly/OriginWafer Fab Source 09/Jun/2014
Wafer Fab Site Addition 05/Aug/2014
PCN PackagingReel Trailer Update 08/May/2015
Reel Trailer Revision 14/Sep/2015
Standard Package800
Category Discrete Semiconductor Products
FamilyFETs - Single
SeriesTrenchMOS™
PackagingTape & Reel (TR)
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Rds On (Max) @ Id, Vgs8.9 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id2.1V @ 1mA
Gate Charge (Qg) @ Vgs94.3nC @ 5V
Input Capacitance (Ciss) @ Vds11650pF @ 25V
Power - Max263W
Mounting TypeSurface Mount
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageD2PAK
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)BUK969R3-100E,118
Related LinksBUK969R3, BUK969R3-100E,118 Datasheet, NXP Semiconductors/Freescale Semiconductor, Inc. Distributor
BUK969R3-100E,118 Details Description
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