Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks
| Internal Part Number | EIS-C2M0080120D | |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Production Status (Lifecycle) | In Production | |
| Condition | New & Unused, Original Sealed | |
| Mfg Application Notes | SiC MOSFET Isolated Gate Driver | |
| Featured Product | Cree - Silicon Carbide Power MOSFETs | |
| Standard Package | 30 | |
| Category | Discrete Semiconductor Products | |
| Family | FETs - Single | |
| Series | C2M™ | |
| Packaging | Bulk | |
| FET Type | SiCFET N-Channel, Silicon Carbide | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) | |
| Current - Continuous Drain (Id) @ 25°C | 36A (Tc) | |
| Rds On (Max) @ Id, Vgs | 98 mOhm @ 20A, 20V | |
| Vgs(th) (Max) @ Id | 4V @ 5mA | |
| Gate Charge (Qg) @ Vgs | 62nC @ 5V | |
| Input Capacitance (Ciss) @ Vds | 950pF @ 1000V | |
| Power - Max | 192W | |
| Mounting Type | Through Hole | |
| Package / Case | TO-247-3 | |
| Supplier Device Package | TO-247-3 | |
| Weight | 0.001 KG | |
| Application | Email for details | |
| Alternative Part (Replacement) | C2M0080120D | |
| Related Links | C2M00, C2M0080120D Datasheet, Cree Inc. Distributor | |
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