Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks
Internal Part Number | EIS-C2M0160120D | |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Production Status (Lifecycle) | In Production | |
Condition | New & Unused, Original Sealed | |
Featured Product | Cree - Silicon Carbide Power MOSFETs | |
Standard Package | 30 | |
Category | Discrete Semiconductor Products | |
Family | FETs - Single | |
Series | Z-FET™ | |
Packaging | Tube | |
FET Type | SiCFET N-Channel, Silicon Carbide | |
FET Feature | Standard | |
Drain to Source Voltage (Vdss) | 1200V (1.2kV) | |
Current - Continuous Drain (Id) @ 25°C | 17.7A (Tc) | |
Rds On (Max) @ Id, Vgs | 196 mOhm @ 10A, 20V | |
Vgs(th) (Max) @ Id | 2.5V @ 500µA | |
Gate Charge (Qg) @ Vgs | 32.6nC @ 20V | |
Input Capacitance (Ciss) @ Vds | 527pF @ 800V | |
Power - Max | 125W | |
Mounting Type | Through Hole | |
Package / Case | TO-247-3 | |
Supplier Device Package | TO-247-3 | |
Weight | 0.001 KG | |
Application | Email for details | |
Alternative Part (Replacement) | C2M0160120D | |
Related Links | C2M01, C2M0160120D Datasheet, Cree Inc. Distributor |
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