EPC EPC2016C

EPC2016C picture photo
Mfg. Part Number
EPC2016C
Manufacturer
Product Category
FETs - Single
Brief Description
TRANS GAN 100V 18A BUMPED DIE
Datasheet Download
EPC2016C.pdf
Availability of EPC2016C

Available Quantity

5020 Pieces

Can ship today


Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

Marketing Price
$ 1.28700
Our Price
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QUANTITY

 

EIS Components is the stocking Distributor of EPC2016C, we specialize in EPC all series electronic components. EPC2016C can be shipped within 24 hours after order. If you have any demands for EPC2016C, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
EPC2016C Order Process
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We reply within 24 hours
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Specifications of EPC2016C
Internal Part NumberEIS-EPC2016C
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)In Production
ConditionNew & Unused, Original Sealed
Mfg Application NotesAssembling eGaN® FETs
Die Attach Procedure
Die Removal Procedure
Using eGaN® FETs
Featured ProductEPC Low Voltage eGaN® FETs
Reference Design LibraryEPC9106: 250W(x2) @ 4O, ± 27V in, Class D
Standard Package2,500
Category Discrete Semiconductor Products
FamilyFETs - Single
SerieseGaN®
PackagingTape & Reel (TR)
FET TypeGaNFET N-Channel, Gallium Nitride
FET FeatureStandard
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C18A (Ta)
Rds On (Max) @ Id, Vgs16 mOhm @ 11A, 5V
Vgs(th) (Max) @ Id2.5V @ 3mA
Gate Charge (Qg) @ Vgs4.5nC @ 5V
Input Capacitance (Ciss) @ Vds420pF @ 50V
Power - Max-
Mounting TypeSurface Mount
Package / CaseDie
Supplier Device PackageDie
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)EPC2016C
Related LinksEPC2, EPC2016C Datasheet, EPC Distributor
EPC2016C Details Description
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