EPC EPC2103ENG

EPC2103ENG picture photo
Mfg. Part Number
EPC2103ENG
Manufacturer
Product Category
FETs - Arrays
Brief Description
TRANS GAN 2N-CH 80V BUMPED DIE
Datasheet Download
EPC2103ENG.pdf
Availability of EPC2103ENG

Available Quantity

5020 Pieces

Can ship today


Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

Marketing Price
$ 7.29600
Our Price
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QUANTITY

 

EIS Components is the stocking Distributor of EPC2103ENG, we specialize in EPC all series electronic components. EPC2103ENG can be shipped within 24 hours after order. If you have any demands for EPC2103ENG, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
EPC2103ENG Order Process
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Specifications of EPC2103ENG
Internal Part NumberEIS-EPC2103ENG
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)In Production
ConditionNew & Unused, Original Sealed
Product Training ModuleseGaN® Integrated GaN Power
Standard Package10
Category Discrete Semiconductor Products
FamilyFETs - Arrays
SerieseGaN®
PackagingTray
FET Type2 N-Channel (Half Bridge)
FET FeatureGaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)80V
Current - Continuous Drain (Id) @ 25°C23A
Rds On (Max) @ Id, Vgs5.5 mOhm @ 20A, 5V
Vgs(th) (Max) @ Id2.5V @ 7mA
Gate Charge (Qg) @ Vgs6.5nC @ 5V
Input Capacitance (Ciss) @ Vds760pF @ 40V
Power - Max-
Mounting TypeSurface Mount
Package / CaseDie
Supplier Device PackageDie
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)EPC2103ENG
Related LinksEPC21, EPC2103ENG Datasheet, EPC Distributor
EPC2103ENG Details Description
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