GeneSiC Semiconductor GA10JT12-263
- Mfg. Part Number
- GA10JT12-263
- Manufacturer
- GeneSiC Semiconductor
- Product Category
- FETs - Single
- Brief Description
- TRANS SJT 1200V 25A
- Datasheet Download
- GA10JT12-263.pdf
Availability of GA10JT12-263
Available Quantity
5822 Pieces
Can ship today
Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks
- Marketing Price
- N/A
- Our Price
- Quote by Email
EIS Components is the stocking Distributor of GA10JT12-263, we specialize in GeneSiC Semiconductor all series electronic components. GA10JT12-263 can be shipped within 24 hours after order. If you have any demands for GA10JT12-263, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
- GA10JT12-263 Order Process
- Add Parts to RFQ form
- Submit RFQ
- We reply within 24 hours
- You confirm order
- Payment
- Ship out your order
Specifications of
GA10JT12-263
| Internal Part Number | EIS-GA10JT12-263 | |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Production Status (Lifecycle) | In Production | |
| Condition | New & Unused, Original Sealed | |
| Standard Package | 50 | |
| Category | Discrete Semiconductor Products | |
| Family | FETs - Single | |
| Series | - | |
| Packaging | Tube | |
| FET Type | Silicon Carbide, Normally Off | |
| FET Feature | Super Junction | |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) | |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) | |
| Rds On (Max) @ Id, Vgs | 120 mOhm @ 10A | |
| Vgs(th) (Max) @ Id | - | |
| Gate Charge (Qg) @ Vgs | - | |
| Input Capacitance (Ciss) @ Vds | 1403pF @ 800V | |
| Power - Max | 170W | |
| Mounting Type | Surface Mount | |
| Package / Case | - | |
| Supplier Device Package | - | |
| Weight | 0.001 KG | |
| Application | Email for details | |
| Alternative Part (Replacement) | GA10JT12-263 | |
| Related Links | GA10JT, GA10JT12-263 Datasheet, GeneSiC Semiconductor Distributor | |
GA10JT12-263 Details Description
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