GeneSiC Semiconductor GA10JT12-263

GA10JT12-263 picture photo
Mfg. Part Number
GA10JT12-263
Manufacturer
Product Category
FETs - Single
Brief Description
TRANS SJT 1200V 25A
Datasheet Download
GA10JT12-263.pdf
Availability of GA10JT12-263

Available Quantity

5822 Pieces

Can ship today


Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

Marketing Price
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Our Price
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EIS Components is the stocking Distributor of GA10JT12-263, we specialize in GeneSiC Semiconductor all series electronic components. GA10JT12-263 can be shipped within 24 hours after order. If you have any demands for GA10JT12-263, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
GA10JT12-263 Order Process
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Specifications of GA10JT12-263
Internal Part NumberEIS-GA10JT12-263
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)In Production
ConditionNew & Unused, Original Sealed
Standard Package50
Category Discrete Semiconductor Products
FamilyFETs - Single
Series-
PackagingTube
FET TypeSilicon Carbide, Normally Off
FET FeatureSuper Junction
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C25A (Tc)
Rds On (Max) @ Id, Vgs120 mOhm @ 10A
Vgs(th) (Max) @ Id-
Gate Charge (Qg) @ Vgs-
Input Capacitance (Ciss) @ Vds1403pF @ 800V
Power - Max170W
Mounting TypeSurface Mount
Package / Case-
Supplier Device Package-
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)GA10JT12-263
Related LinksGA10JT, GA10JT12-263 Datasheet, GeneSiC Semiconductor Distributor
GA10JT12-263 Details Description
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