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Global Power Technologies Group GP1M003A090C

GP1M003A090C picture photo
Mfg. Part Number
GP1M003A090C
Manufacturer
Product Category
FETs - Single
Brief Description
MOSFET N-CH 900V 2.5A DPAK
Datasheet Download
GP1M003A090C.pdf
Availability of GP1M003A090C

Available Quantity

8100 Pieces

Can ship today

Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

Marketing Price
$ 0.54250
Our Price
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QUANTITY

 

EIS Components is the stocking Distributor of GP1M003A090C, we specialize in Global Power Technologies Group all series electronic components. GP1M003A090C can be shipped within 24 hours after order. If you have any demands for GP1M003A090C, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
GP1M003A090C Order Process
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We reply within 24 hours
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Specifications of GP1M003A090C
Internal Part NumberEIS-GP1M003A090C
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)In Production
ConditionNew & Unused, Original Sealed
Standard Package1
Category Discrete Semiconductor Products
FamilyFETs - Single
Series-
PackagingCut Tape (CT)
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)900V
Current - Continuous Drain (Id) @ 25°C2.5A (Tc)
Rds On (Max) @ Id, Vgs5.1 Ohm @ 1.25A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) @ Vgs17nC @ 10V
Input Capacitance (Ciss) @ Vds748pF @ 25V
Power - Max94W
Mounting TypeSurface Mount
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageD-Pak
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)GP1M003A090C
Related LinksGP1M00, GP1M003A090C Datasheet, Global Power Technologies Group Distributor
GP1M003A090C Details Description
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