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Global Power Technologies Group GP1M009A090H

GP1M009A090H picture photo
Mfg. Part Number
GP1M009A090H
Manufacturer
Product Category
FETs - Single
Brief Description
MOSFET N-CH 900V 9A TO220
Datasheet Download
GP1M009A090H.pdf
Availability of GP1M009A090H

Available Quantity

5020 Pieces

Can ship today

Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

Marketing Price
$ 1.09350
Our Price
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QUANTITY

 

EIS Components is the stocking Distributor of GP1M009A090H, we specialize in Global Power Technologies Group all series electronic components. GP1M009A090H can be shipped within 24 hours after order. If you have any demands for GP1M009A090H, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
GP1M009A090H Order Process
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We reply within 24 hours
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Specifications of GP1M009A090H
Internal Part NumberEIS-GP1M009A090H
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)In Production
ConditionNew & Unused, Original Sealed
Standard Package2,000
Category Discrete Semiconductor Products
FamilyFETs - Single
Series-
PackagingTape & Reel (TR)
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)900V
Current - Continuous Drain (Id) @ 25°C9A (Tc)
Rds On (Max) @ Id, Vgs1.4 Ohm @ 4.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) @ Vgs65nC @ 10V
Input Capacitance (Ciss) @ Vds2324pF @ 25V
Power - Max290W
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)GP1M009A090H
Related LinksGP1M00, GP1M009A090H Datasheet, Global Power Technologies Group Distributor
GP1M009A090H Details Description
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