Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks
| Internal Part Number | EIS-GT10J312(Q) | |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Production Status (Lifecycle) | Obsolete / Discontinued | |
| Condition | New & Unused, Original Sealed | |
| Standard Package | 50 | |
| Category | Discrete Semiconductor Products | |
| Family | IGBTs - Single | |
| Series | - | |
| Packaging | Tube | |
| IGBT Type | - | |
| Voltage - Collector Emitter Breakdown (Max) | 600V | |
| Current - Collector (Ic) (Max) | 10A | |
| Current - Collector Pulsed (Icm) | 20A | |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 10A | |
| Power - Max | 60W | |
| Switching Energy | - | |
| Input Type | Standard | |
| Gate Charge | - | |
| Td (on/off) @ 25°C | 400ns/400ns | |
| Test Condition | 300V, 10A, 100 Ohm, 15V | |
| Reverse Recovery Time (trr) | 200ns | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | TO-220SM | |
| Weight | 0.001 KG | |
| Application | Email for details | |
| Alternative Part (Replacement) | GT10J312(Q) | |
| Related Links | GT10J, GT10J312(Q) Datasheet, Toshiba Semiconductor & Storage Distributor | |
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