Toshiba Semiconductor & Storage GT10J312(Q)

GT10J312(Q) picture photo
Mfg. Part Number
GT10J312(Q)
Manufacturer
Product Category
IGBTs - Single
Brief Description
IGBT 600V 10A 60W TO220SM
Datasheet Download
GT10J312(Q).pdf
Availability of GT10J312(Q)

Available Quantity

5020 Pieces

Can ship today


Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

Marketing Price
N/A
Our Price
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QUANTITY

 

EIS Components is the stocking Distributor of GT10J312(Q), we specialize in Toshiba Semiconductor & Storage all series electronic components. GT10J312(Q) can be shipped within 24 hours after order. If you have any demands for GT10J312(Q), Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
GT10J312(Q) Order Process
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Specifications of GT10J312(Q)
Internal Part NumberEIS-GT10J312(Q)
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)Obsolete / Discontinued
ConditionNew & Unused, Original Sealed
Standard Package50
Category Discrete Semiconductor Products
FamilyIGBTs - Single
Series-
PackagingTube
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)10A
Current - Collector Pulsed (Icm)20A
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 10A
Power - Max60W
Switching Energy-
Input TypeStandard
Gate Charge-
Td (on/off) @ 25°C400ns/400ns
Test Condition300V, 10A, 100 Ohm, 15V
Reverse Recovery Time (trr)200ns
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Supplier Device PackageTO-220SM
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)GT10J312(Q)
Related LinksGT10J, GT10J312(Q) Datasheet, Toshiba Semiconductor & Storage Distributor
GT10J312(Q) Details Description
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