Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks
Internal Part Number | EIS-GT60M303(Q) | |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Production Status (Lifecycle) | In Production | |
Condition | New & Unused, Original Sealed | |
Standard Package | 100 | |
Category | Discrete Semiconductor Products | |
Family | IGBTs - Single | |
Series | - | |
Packaging | Tube | |
IGBT Type | - | |
Voltage - Collector Emitter Breakdown (Max) | 900V | |
Current - Collector (Ic) (Max) | 60A | |
Current - Collector Pulsed (Icm) | 120A | |
Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 60A | |
Power - Max | 170W | |
Switching Energy | - | |
Input Type | Standard | |
Gate Charge | - | |
Td (on/off) @ 25°C | 460ns/600ns | |
Test Condition | - | |
Reverse Recovery Time (trr) | 2.5µs | |
Package / Case | TO-3PL | |
Mounting Type | Through Hole | |
Supplier Device Package | TO-3P(LH) | |
Weight | 0.001 KG | |
Application | Email for details | |
Alternative Part (Replacement) | GT60M303(Q) | |
Related Links | GT60M, GT60M303(Q) Datasheet, Toshiba Semiconductor & Storage Distributor |
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