Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks
| Internal Part Number | EIS-GT60N321(Q) | |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Production Status (Lifecycle) | Obsolete / Discontinued | |
| Condition | New & Unused, Original Sealed | |
| EDA / CAD Models | Download from Accelerated Designs | |
| Standard Package | 100 | |
| Category | Discrete Semiconductor Products | |
| Family | IGBTs - Single | |
| Series | - | |
| Packaging | Tube | |
| IGBT Type | - | |
| Voltage - Collector Emitter Breakdown (Max) | 1000V | |
| Current - Collector (Ic) (Max) | 60A | |
| Current - Collector Pulsed (Icm) | 120A | |
| Vce(on) (Max) @ Vge, Ic | 2.8V @ 15V, 60A | |
| Power - Max | 170W | |
| Switching Energy | - | |
| Input Type | Standard | |
| Gate Charge | - | |
| Td (on/off) @ 25°C | 330ns/700ns | |
| Test Condition | - | |
| Reverse Recovery Time (trr) | 2.5µs | |
| Package / Case | TO-3PL | |
| Mounting Type | Through Hole | |
| Supplier Device Package | TO-3P(LH) | |
| Weight | 0.001 KG | |
| Application | Email for details | |
| Alternative Part (Replacement) | GT60N321(Q) | |
| Related Links | GT60N, GT60N321(Q) Datasheet, Toshiba Semiconductor & Storage Distributor | |
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