Toshiba Semiconductor & Storage GT60N321(Q)

GT60N321(Q) picture photo
Mfg. Part Number
GT60N321(Q)
Manufacturer
Product Category
IGBTs - Single
Brief Description
IGBT 1000V 60A 170W TO3P LH
Datasheet Download
GT60N321(Q).pdf
Availability of GT60N321(Q)

Available Quantity

5020 Pieces

Can ship today


Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

Marketing Price
N/A
Our Price
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QUANTITY

 

EIS Components is the stocking Distributor of GT60N321(Q), we specialize in Toshiba Semiconductor & Storage all series electronic components. GT60N321(Q) can be shipped within 24 hours after order. If you have any demands for GT60N321(Q), Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
GT60N321(Q) Order Process
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We reply within 24 hours
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Specifications of GT60N321(Q)
Internal Part NumberEIS-GT60N321(Q)
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)Obsolete / Discontinued
ConditionNew & Unused, Original Sealed
EDA / CAD ModelsDownload from Accelerated Designs
Standard Package100
Category Discrete Semiconductor Products
FamilyIGBTs - Single
Series-
PackagingTube
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)1000V
Current - Collector (Ic) (Max)60A
Current - Collector Pulsed (Icm)120A
Vce(on) (Max) @ Vge, Ic2.8V @ 15V, 60A
Power - Max170W
Switching Energy-
Input TypeStandard
Gate Charge-
Td (on/off) @ 25°C330ns/700ns
Test Condition-
Reverse Recovery Time (trr)2.5µs
Package / CaseTO-3PL
Mounting TypeThrough Hole
Supplier Device PackageTO-3P(LH)
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)GT60N321(Q)
Related LinksGT60N, GT60N321(Q) Datasheet, Toshiba Semiconductor & Storage Distributor
GT60N321(Q) Details Description
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